Organic light emitting display device and method of manufacturing the same

ABSTRACT

An organic light emitting display device is disclosed, which comprises an anode electrode provided in a light emitting area on a substrate having a plurality of pixels, each pixel including a light emitting area and a transmissive area; an organic light emitting layer on the anode electrode; a cathode electrode on the organic light emitting layer; an auxiliary electrode connected with the cathode electrode; and a connection electrode connected with the anode electrode and provided in the transmissive area of the substrate.

CROSS REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of Korean Patent Application No.10-2015-0157090 filed on Nov. 10, 2015, which is hereby incorporated byreference for all purposes as if fully set forth herein.

BACKGROUND Field of the Invention

The present invention relates to an organic light emitting display(OLED) device, and more particularly, to a top emission type OLED deviceand a method of manufacturing the same.

Discussion of the Related Art

An organic light emitting display (OLED) device is a self-light emittingdisplay device, and has many advantages such as low power consumption,fast response speed, high light emission efficiency, high luminance andwide viewing angle. The OLED device is categorized into a top emissiontype and a bottom emission type depending on the direction in which thelight emitted from an organic light emitting diode is transmitted.

In the bottom emission type OLED device, since a circuit element isdisposed between a light emitting layer and an image display surface,the aperture ratio may be lowered due to the circuit element. On theother hand, the top emission type OLED device has a higher apertureratio, because a circuit element is not disposed between a lightemitting layer and an image display surface.

FIG. 1 is a cross-sectional view illustrating a top emission typeorganic light emitting display device according to the related art.

As illustrated in FIG. 1, a thin film transistor layer T, a passivationlayer 20, a first planarization layer 31, a second planarization layer32, a first anode electrode 40, a second anode electrode 60, a firstauxiliary electrode 50, a second auxiliary electrode 70, a bank 80, apartition wall 92, an organic light emitting layer 94, and a cathodeelectrode 96 are formed in an active area AA on a substrate 10.

The thin film transistor layer T includes an active layer 11, a gateinsulating film 12, a gate electrode 13, an interlayer dielectric 14, asource electrode 15, and a drain electrode 16.

The first anode electrode 40 and the first auxiliary electrode 50 areformed on the first planarization layer 31, and the second anodeelectrode 60 and the second auxiliary electrode 70 are formed on thesecond planarization layer 32. The first auxiliary electrode 50 servesto reduce the resistance of the cathode electrode 96 together with thesecond auxiliary electrode 70.

The bank 80 is formed on the second anode electrode 60 and the secondauxiliary electrode 70 to define a pixel area, the organic lightemitting layer 94 is formed within the pixel area defined by the bank80, and the cathode electrode 96 is formed on the organic light emittinglayer 94.

The partition wall 92 is formed on the second auxiliary electrode 70.The partition wall 92 is spaced apart from the bank 80 at apredetermined distance, and the second auxiliary electrode 70 isconnected with the cathode electrode 96 through the spaced area betweenthe partition wall 92 and the bank 80 to reduce the resistance of thecathode electrode 96.

In case of the top emission type, the light emitted from the organiclight emitting layer 94 passes through the cathode electrode 96.Therefore, the cathode electrode 96 is typically formed using atransparent conductive material, which increases the resistance of thecathode electrode 96. In order to reduce the resistance of the cathodeelectrode 96, the cathode electrode 96 is connected with the firstauxiliary electrode 50 and the second auxiliary electrode 70.

Particularly, the OLED device illustrated in FIG. 1 includes twoauxiliary electrodes of the first auxiliary electrode 50 and the secondauxiliary electrode 70, which are connected with each other to reducethe resistance of the cathode electrode 96. In such a case, because thesecond auxiliary electrode 70 is formed on the same layer as the secondanode electrode 60, if a width of the second auxiliary electrode 70increases to reduce the resistance of the cathode electrode 96, a widthof the second anode electrode 60 is desired to be reduced, which mayreduce the pixel area. Therefore, there is limitation in increasing thewidth of the second auxiliary electrode 70.

To address such a problem, the first auxiliary electrode 50 isadditionally formed below the second auxiliary electrode 70 to reducethe resistance of the cathode electrode 96, without reducing the pixelarea.

The aforementioned top emission type transparent OLED device accordingto the related art may have the following problems.

An array test is typically performed to determine whether there is anyelectrical defect in electrodes formed on the substrate 10 in which atest signal is applied to an electrode of each layer and the charge ofthe second anode electrode 60 is checked through an image in each pixel.Specifically, the transparent OLED device includes a transmissiveportion and a light emitting portion, and all the elements of the lightemitting portion are vertically deposited, as illustrated in FIG. 1, toobtain an enlarged area of the transmissive portion and improvetransmittance.

When an array test is performed for the OLED device in which the thinfilm transistor layer T, the first anode electrode 40, and the secondanode electrode 60 are vertically deposited as illustrated in FIG. 1, ifa test signal is applied to the second anode electrode 60 to determinewhether there is any defect in the second anode electrode 60 by checkingan image in each pixel, the defect of the second anode electrode 60 maynot be accurately tested due to interference caused by the thin filmtransistor layer T and the first anode electrode 60, which are depositedbelow the second anode electrode 60.

Particularly, since a low potential voltage Vss signal is applied to thefirst auxiliary electrode 50 formed in the light emitting portion ofeach pixel, the result of the array test for all pixels is representedby the same image, and thus, it may not be possible to determine whetherthere is any defect in the second anode electrode 60 of a specificpixel.

SUMMARY

Accordingly, the present invention is directed to an organic lightemitting display device and a method of manufacturing the same, whichsubstantially obviate one or more problems due to limitations anddisadvantages of the related art.

An advantage of embodiments of the present invention is to provide anorganic light emitting display device with improved repairbility and amethod of manufacturing the same.

Additional advantages and features of embodiments of the presentinvention will be set forth in part in the description which follows andin part will become apparent to those having ordinary skill in the artupon examination of the following or may be learned from practice of theinvention. The objectives and other advantages of embodiments of thepresent invention may be realized and attained by the structureparticularly pointed out in the written description and claims hereof aswell as the appended drawings.

To achieve these objects and other advantages and in accordance with thepurpose of the invention, as embodied and broadly described herein, anorganic light emitting display device may, for example, include asubstrate having a plurality of pixels, each pixel including a lightemitting area and a transmissive area; an anode electrode in the lightemitting area; an organic light emitting layer on the anode electrode; acathode electrode on the organic light emitting layer; an auxiliaryelectrode connected with the cathode electrode; and a connectionelectrode connected with the anode electrode and provided in thetransmissive area.

In another aspect, a method of manufacturing an organic light emittingdisplay device may, for example, include forming a first anode electrodeand a first auxiliary electrode spaced apart from the first anodeelectrode, in a light emitting area on a substrate having a plurality ofpixels, each pixel including a light emitting area and a transmissivearea; forming a planarization layer on the first anode electrode and thefirst auxiliary electrode and respectively forming contact holes, whichexternally expose the first anode electrode and the first auxiliaryelectrode, by removing a predetermined area of the planarization layer;and forming a second anode electrode and a second auxiliary electrode onthe planarization layer, he second anode electrode being connected withthe first anode electrode and the second auxiliary electrode beingconnected with the second auxiliary electrode, wherein a connectionelectrode connected with the first anode electrode is formed in thetransmissive area when forming the first anode electrode and the firstauxiliary electrode.

It is to be understood that both the foregoing general description andthe following detailed description of the present invention areexemplary and explanatory and are intended to provide furtherexplanation of the invention as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the invention and are incorporated in and constitute apart of this application, illustrate embodiment(s) of the invention andtogether with the description serve to explain the principle of theinvention. In the drawings:

FIG. 1 is a cross-sectional view illustrating a top emission typeorganic light emitting display device according to the related art;

FIG. 2 is a plane view illustrating an organic light emitting displaydevice according to one embodiment of the present invention;

FIG. 3 is an enlarged view illustrating one sub pixel and an auxiliaryelectrode in the organic light emitting display device illustrated inFIG. 2;

FIG. 4 is a cross-sectional view illustrating an organic light emittingdisplay device according to one embodiment of the present invention,which is taken along line “I-I” in FIG. 3; and

FIGS. 5A to 5H are cross-sectional views illustrating a method ofmanufacturing an organic light emitting display device according to oneembodiment of the present invention.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

Advantages and features of the present invention, and implementationmethods thereof will be clarified through following embodimentsdescribed with reference to the accompanying drawings. The presentinvention may, however, be embodied in different forms and should not beconstrued as limited to the embodiments set forth herein. Rather, theseembodiments are provided so that this disclosure will be thorough andcomplete, and will fully convey the scope of the present invention tothose skilled in the art. Further, the present invention is only definedby scopes of claims.

A shape, a size, a ratio, an angle, and a number disclosed in thedrawings for describing embodiments of the present invention are merelyan example, and thus, the present invention is not limited to theillustrated details. Like reference numerals refer to like elementsthroughout. In the following description, when the detailed descriptionof the relevant known function or configuration is determined tounnecessarily obscure the important point of the present invention, thedetailed description will be omitted. In a case where ‘comprise’,‘have’, and ‘include’ described in the present specification are used,another part may be added unless ‘only˜’ is used. The terms of asingular form may include plural forms unless referred to the contrary.

In construing an element, the element is construed as including an errorrange although there is no explicit description.

In describing a position relationship, for example, when the positionrelationship is described as ‘upon˜’, ‘above˜’, ‘below˜’, and ‘nextto˜’, one or more portions may be arranged between two other portionsunless ‘just’ or ‘direct’ is used.

In describing a time relationship, for example, when the temporal orderis described as ‘after˜’, ‘subsequent˜’, ‘next˜’, and ‘before˜’, a casewhich is not continuous may be included unless ‘just’ or ‘direct’ isused.

It will be understood that, although the terms “first”, “second”, etc.may be used herein to describe various elements, these elements shouldnot be limited by these terms. These terms are only used to distinguishone element from another element. Therefore, a first element could betermed a second element, and, similarly, a second element could betermed a first element, without departing from the scope of the presentinvention.

Features of various embodiments of the present invention may bepartially or overall coupled to or combined with each other, and may bevariously inter-operated with each other and driven technically as thoseskilled in the art can sufficiently understand. The embodiments of thepresent invention may be carried out independently from each other, ormay be carried out together in co-dependent relationship.

Hereinafter, reference will now be made in detail to embodiments of thepresent invention, examples of which are illustrated in the accompanyingdrawings.

FIG. 2 is a plane view illustrating an organic light emitting display(OLED) device according to one embodiment of the present invention. FIG.3 is an enlarged view illustrating one sub pixel and an auxiliaryelectrode in the OLED device illustrated in FIG. 2.

Referring to FIGS. 2 and 3, the OLED device according to one embodimentof the present invention includes a plurality of pixels on a substrate,wherein each pixel includes a transmissive area and a light emittingarea provided with four sub pixels.

The four sub pixels may be comprised of, but not limited to, sub pixelsthat emit red (R) light, white (W) light, blue (B) light, and green (G)light. Hereinafter, each of the four sub pixels will be described indetail.

The light emitting area of each of the sub pixels is provided with athin film transistor T, a first anode electrode 180, a first auxiliaryelectrode 190, a second anode electrode 200, and a cathode electrode250.

The thin film transistor T is formed in a pixel area of each sub pixel.The thin film transistor T supplies a data signal from a data line (notshown) to the first anode electrode 180 in response to a gate signalfrom a gate line (not shown).

The first anode electrode 180 is formed within the pixel area. The firstanode electrode 180 is connected with a source electrode (not shown) ofthe thin film transistor T through a contact hole, and receives the datasignal from the thin film transistor T.

The first auxiliary electrode 190 is formed to be spaced apart from thefirst anode electrode 180 in the light emitting area. The firstauxiliary electrode 190 is connected to the cathode electrode 250together with the second auxiliary electrode 210, which will bedescribed later, and lowers the resistance of the cathode electrode 250.The first auxiliary electrode 190 may be formed of the same material andthickness as those of the first anode electrode 180 on the same layer asthe first anode electrode 180. The first auxiliary electrode 190 and thefirst anode electrode 180 may beneficially be formed through the sameprocess at the same time.

The second anode electrode 200 is formed within the light emitting areaof each sub pixel. The second anode electrode 200 is connected with thefirst anode electrode 180 through a contact hole, and receives the datasignal from the first anode electrode 180.

The cathode electrode 250 is formed in an entire area including thelight emitting area, the transmissive area, and an area between thetransmissive areas. The cathode electrode 250 is supplied with a drivingpower source from a driving power supply (not shown).

A connection electrode 185, which is connected to the first anodeelectrode 180, and the cathode electrode 250, are formed in thetransmissive area of each of the sub pixels. The cathode electrode 250is extended from the light emitting area of each of the sub-pixels asdescribed above, and thus its repeated description will be omitted.

The first anode electrode 180 may include a first lower anode electrode(not shown), a first upper anode electrode (not shown), and a firstcover anode electrode 183. The first anode electrode 180, which iscomprised of a plurality of layers including all of the first loweranode electrode (not shown), the first upper anode electrode (not shown)and the first cover anode electrode 183, is formed in the light emittingarea of each of the sub pixels, and the connection electrode 185connected with the first cover anode electrode 183 of the first anodeelectrode 180 is formed in the transmissive area of each pixel, asillustrated in FIGS. 2 and 3. The connection electrode 185 maybeneficially be formed through the same process as that of the firstcover anode electrode 183 simultaneously with the first cover anodeelectrode 183.

In one embodiment of the present invention, when an array test isperformed for the OLED device to determine whether there is any defectin the second anode electrode 200, a test signal applied to the secondanode electrode 200 is recognized through the connection electrode 185formed in the transmissive area. By doing so, interference caused by thesignals of the thin film transistor T, the first anode electrode 180 andthe first auxiliary electrode 190, which are formed below the secondanode electrode 200, may be removed to perform only the test for thedefect of the second anode electrode 200.

That is, according to the related art, the test signal applied to thesecond anode electrode 200 is recognized in the light emitting areawhere the thin film transistor T, the first anode electrode 180, thefirst auxiliary electrode 190, and the second anode electrode 190 arevertically deposited. As a result, it may be difficult to accuratelytest the defect of the second anode electrode 200 due to interferencecaused by the signals of the thin film transistor T, the first anodeelectrode 180 and the first auxiliary electrode 190. However, in theembodiment of the present invention, the test signal applied to thesecond anode electrode 200 is recognized in the transmissive area wherethe thin film transistor T, the first anode electrode 180 and the firstauxiliary electrode 190 are not deposited, and thus, the defect of thesecond anode electrode 200 may be accurately tested.

Particularly, the connection electrode 185 according to one embodimentof the present invention may be made of a transparent conductivematerial such as ITO in the transmissive area so as not to affecttransmittance of each pixel.

As described above, in the OLED device according to one embodiment ofthe present invention, the connection electrode 185 made of atransparent conductive material such as ITO is formed to be extendedfrom the first cover anode electrode 183 in the transmissive area, andthe test signal of the second anode electrode 200 is recognized throughthe connection electrode 185, and thus, the defect of the second anodeelectrode 200 may be tested even without affecting transmittance of eachpixel.

Particularly, in the transmissive area of each of the sub pixels, theconnection electrode 185 is formed to overlap (O) a second anodeelectrode of a corresponding one of sub pixels of another adjacentpixel. Therefore, when a defect occurs in the second anode electrode 200of a specific sub pixel, the defective pixel may simply be repaired by,for example, welding the connection electrode 185 of the specific subpixel to the second anode electrode of another adjacent sub pixel.

At this time, the corresponding sub pixel means a sub pixel that emitsthe same light as red (R) light, white (W) light, blue (B) light, orgreen (G) light, which is emitted from the sub pixel that includes thesecond anode electrode 200 where a defect occurs. That is, in oneembodiment of the present invention, the connection electrode 185 of thespecific pixel is formed to overlap (O) the second anode electrode ofanother sub pixel, and when a defect occurs in the second anodeelectrode of the specific pixel, the connection electrode 185 of thespecific pixel and the second anode electrode of another adjacent subpixel are, for example, welded by a laser to simply repair thedefective. Instead of a laser welding, various types of repair methodscan be used to connect the connection electrode 185 and the second anodeelectrode of another sub pixel.

The first auxiliary electrode 190, the second auxiliary electrode 210,the partition wall 230 and the cathode electrode 250 are formed betweenthe plurality of pixels, specifically between the transmissive areas ofthe plurality of pixels. The first auxiliary electrode 190 and thecathode electrode 250 are formed to be extended from the light emittingarea of each pixel, as described above, and thus, their repeateddescriptions will be omitted.

The second auxiliary electrode 210 is formed to be spaced apart from thesecond anode electrode 200 on the first auxiliary electrode 180. Thesecond auxiliary electrode 210 is connected to the first auxiliaryelectrode 190 through a contact hole, and is connected to the cathodeelectrode 250 together with the first auxiliary electrode 190 to lowerthe resistance of the cathode electrode 250. The second auxiliaryelectrode 210 may be formed of the same material and the same thicknessas those of the second anode electrode 200 on the same layer as thesecond anode electrode 200. The second auxiliary electrode 210 maybeneficially be formed through the same process as that of the secondanode electrode 200 simultaneously with the second anode electrode 200.

The partition wall 230 is formed on the second auxiliary electrode 210.The partition wall 230 is spaced apart from a bank (not shown) at apredetermined distance, and the second auxiliary electrode 210 and thecathode electrode 250 are electrically connected with each other throughthe spaced area between the partition wall 230 and the bank.

In one embodiment of the present invention, the first auxiliaryelectrodes 190 of the respective sub pixels that emit red (R) light,white (W) light, blue (B) light, and green (G) light are formed in asingle body as illustrated. However, the present embodiment is notlimited to this example, and the first auxiliary electrodes 190 of therespective sub pixels may be formed to be spaced apart from each other.In this case, the first auxiliary electrodes 190 of the respective subpixels may be formed to be connected with the second auxiliaryelectrodes 210 which exist separately for each sub pixel.

Hereinafter, a structure of an OLED device according to one embodimentof the present invention, which may perform a test for a defect of thesecond anode electrode 200 by removing interference caused by thesignals of the thin film transistor T, the first anode electrode 180 andthe first auxiliary electrode 190 and repair a pixel where the defectoccurs, will be described in detail.

FIG. 4 is a cross-sectional view illustrating an OLED device accordingto one embodiment of the present invention, which is taken along line“I-I” in FIG. 3.

Referring to FIG. 4, the organic light emitting display device accordingto one embodiment of the present invention includes an active area AAand a pad area (not shown), which are provided on a substrate 100.

A thin film transistor layer T, a passivation layer 165, a firstplanarization layer 171, a second planarization layer 172, a first anodeelectrode 180, a second anode electrode 200, a first auxiliary electrode190, a second auxiliary electrode 210, a connection electrode 185, abank 220, a partition wall 230, an organic light emitting layer 240, anda cathode electrode 250 are formed in the active area AA on thesubstrate 100.

The thin film transistor layer T includes an active layer 110, a gateinsulating film 120, a gate electrode 130, an interlayer dielectric 140,a source electrode 150, and a drain electrode 160.

The active layer 110 is formed to be overlapped with the gate electrode130 on the substrate 100. The active layer 110 may be made of a siliconbased semiconductor material or an oxide based semiconductor material.Although not shown, a light shielding film may additionally be formedbetween the substrate 100 and the active layer 110. In this case,external light entering the display device through a lower surface ofthe substrate 100 is shielded by the light shielding film, and thus,damage to the active layer 110 by the external light may be avoided.

The gate insulating film 120 is formed on the active layer 110. The gateinsulating film 120 serves to insulate the active layer 110 from thegate electrode 130. The gate insulating film 120 may be made of, but notlimited to, an inorganic insulating material, for example, a siliconoxide (SiOx) film, a silicon nitride (SiNx) film, or multiple layersthereof. The gate insulating film 120 may be formed to be extended to anentire active area AA that includes a transmissive area.

The gate electrode 130 is formed on the gate insulating film 120. Thegate electrode 130 is formed to overlap the active layer 110 byinterposing the gate insulating film therebetween. The gate electrode130 may be made of, but not limited to, a single layer or multiplelayers including any one of Mo, Al, Cr, Au, Ti, Ni, Nd and Cu or theiralloy.

The interlayer dielectric 140 is formed on the gate electrode 130. Theinterlayer dielectric 140 may be made of, but not limited to, the sameinorganic insulating material as that of the gate insulating film 120,for example, a silicon oxide (SiOx) film, a silicon nitride (SiNx) film,or multiple layers thereof. The interlayer dielectric 140 may be formedto be extended to an entire active area AA that includes a transmissivearea.

The source electrode 150 and the drain electrode 160 are formed to faceeach other on the interlayer dielectric 140. A first contact hole CH1,which exposes one end area of the active layer 110, and a second contacthole CH2, which exposes the other end area of the active layer 110, areprovided in the aforementioned gate insulating film 120 and theinterlayer dielectric 140. The source electrode 150 is connected withthe other end area of the active layer 110 through the second contacthole CH2, and the drain electrode 160 is connected with the one end areaof the active layer 110 through the first contact hole CH1.

The source electrode 150 may include a lower source electrode 151 and anupper source electrode 152. The lower source electrode 151 may be formedbetween the interlayer dielectric 140 and the upper source electrode 152to enhance adhesion between the interlayer dielectric 140 and the uppersource electrode 152. Also, the lower source electrode 151 may reduce orprevent a lower surface of the upper source electrode 152 from beingcorroded by protecting the lower surface of the upper source electrode152. Therefore, oxidation of the lower source electrode 151 may besmaller than that of the upper source electrode 152. That is, the lowersource electrode 151 may be made of a material of which corrosionresistance is stronger than that of the upper source electrode 152. Inthis way, the lower source electrode 151 serves as an adhesionenhancement layer or an anti-corrosion layer, and may be made of, butnot limited to, an alloy of Mo and Ti.

The upper source electrode 152 is formed on the lower source electrode151. The upper source electrode 152 may be made of, but not limited to,Cu which is a metal having low resistance. The upper source electrode152 may be made of a metal of which resistance is relatively lower thanthat of the lower source electrode 151. In order to reduce theresistance of the source electrode 150, the upper source electrode 152may be formed to be thicker than the lower source electrode 151.

The drain electrode 160 may include a lower drain electrode 161 and anupper drain electrode 162 similar to the aforementioned source electrode150. The lower drain electrode 161 may be formed between the interlayerdielectric 140 and the upper drain electrode 162 to enhance adhesionbetween the interlayer dielectric 140 and the upper drain electrode 162.Also, the lower drain electrode 161 may reduce or prevent a lowersurface of the upper drain electrode 162 from being corroded. Therefore,oxidation of the lower drain electrode 161 may be smaller than that ofthe upper drain electrode 162. That is, the lower drain electrode 161may be made of a material of which corrosion resistance is stronger thanthat of the upper drain electrode 162. In the same manner as theaforementioned lower source electrode 151, the lower drain electrode 161may be made of, but not limited to, an alloy of Mo and Ti.

The upper drain electrode 162 is formed on the lower drain electrode161. The upper drain electrode 162 may be made of, but not limited to,Cu in the same manner as the aforementioned upper source electrode 152.The upper drain electrode 162 may be beneficially formed to be thickerthan the lower drain electrode 161 to reduce the resistance of the drainelectrode 160.

The upper drain electrode 162 may be formed of the same material and thesame thickness as those of the upper source electrode 152, and the lowerdrain electrode 161 may be formed of the same material and the samethickness as those of the lower source electrode 151. The drainelectrode 160 and the source electrode 150 may beneficially be formedthrough the same process at the same time.

The structure of the aforementioned thin film transistor layer T is notlimited to the shown structure, and it would be appreciated that variousmodifications may be made in the structure of the thin film transistorlayer T. For example, although a top gate structure is shown in whichthe gate electrode 130 is formed above the active layer 110, the thinfilm transistor layer T may be formed of a bottom gate structure inwhich the gate electrode 130 is formed below the active layer 110.

The passivation layer 165 is formed on the thin film transistor layer T,more specifically on the source electrode 150 and the drain electrode160. The passivation layer 165 serves to protect the thin filmtransistor layer T, and may be made of, but not limited to, an inorganicinsulating material, for example, a silicon oxide (SiOx) film or asilicon nitride (SiNx) film. The passivation layer 165 may be formed tobe extended to an entire active area AA that includes a transmissivearea.

The first planarization layer 171 is formed on the passivation layer165. The first planarization layer 171 serves to planarize an upperportion of the substrate 100 provided with the thin film transistor T.The first planarization layer 171 may be made of, but not limited to, anorganic insulating material such as acryl resin, epoxy resin, phenolicresin, polyamides resin and polyimide resin. The first planarizationlayer 171 may be formed to be extended to an entire active area AA thatincludes a transmissive area.

The first anode electrode 180 and the first auxiliary electrode 190 areformed on the first planarization layer 171. That is, the first anodeelectrode 180 and the first auxiliary electrode 190 are formed on thesame layer. The aforementioned passivation layer 165 and theaforementioned first planarization layer 171 are provided with a thirdcontact hole CH3 that exposes the source electrode 150, and the sourceelectrode 150 is connected with the first anode electrode 180 throughthe third contact hole CH3.

The first anode electrode 180 may include a first lower anode electrode181, a first upper anode electrode 182, and a first cover anodeelectrode 183. The first lower anode electrode 181 may be formed betweenthe first planarization layer 171 and the first upper anode electrode182 to enhance adhesion between the first planarization layer 171 andthe first upper anode electrode 182. Also, the first lower anodeelectrode 181 may reduce or prevent a lower surface of the first upperanode electrode 182 from being corroded by protecting the lower surfaceof the first upper anode electrode 182.

As a result, oxidation of the first lower anode electrode 181 may besmaller than that of the first upper anode electrode 182. That is, thefirst lower anode electrode 181 may be made of a material of whichcorrosion resistance is stronger than that of the first upper anodeelectrode 182. Also, the first lower anode electrode 181 may reduce orprevent the upper surface of the upper source electrode 152 from beingcorroded by protecting the upper surface of the upper source electrode152. As a result, oxidation of the first lower anode electrode 181 maybe smaller than that of the upper source electrode 152. That is, thefirst lower anode electrode 181 may be made of a material of whichcorrosion resistance is stronger than that of the upper source electrode152. In this way, since the first lower anode electrode 181 may reduceor prevent the upper surface of the upper source electrode 152 frombeing corroded, the source electrode 150 may be formed in theaforementioned double-layered structure. The first lower anode electrode181 serves as an adhesion enhancement layer or an anti-corrosion layer,and may be made of, but not limited to, an alloy of Mo and Ti.

The first upper anode electrode 182 is formed between the first loweranode electrode 181 and the first cover anode electrode 183. The firstupper anode electrode 182 may be made of, but not limited to, Cu whichis a metal having low resistance. The first upper anode electrode 182may be made of a metal of which resistance is relatively lower than thatof each of the first lower anode electrode 181 and the first cover anodeelectrode 183. In order to reduce the resistance of the first anodeelectrode 180, the first upper anode electrode 182 may beneficially beformed to be thicker than each of the first lower anode electrode 181and the first cover anode electrode 183.

The first cover anode electrode 183 is formed on the first upper anodeelectrode 182. The first cover anode electrode 183 serves to reduce orprevent the first upper anode electrode 182 from being corroded by beingformed to cover the upper surface and side of the first upper anodeelectrode 182. As a result, oxidation of the first cover anode electrode183 may be smaller than that of the first upper anode electrode 182.That is, the first cover anode electrode 183 may be made of a materialof which corrosion resistance is stronger than that of the first upperanode electrode 182.

The first cover anode electrode 183 may be formed to cover the side ofthe first lower anode electrode 181. At this time, oxidation of thefirst cover anode electrode 183 may be smaller than that of the firstlower anode electrode 181. That is, the first cover anode electrode 183may be made of a material of which corrosion resistance is stronger thanthat of the first lower anode electrode 181. The first cover anodeelectrode 183 may be made of, but not limited to, a transparentconductive material such as ITO.

The first auxiliary electrode 190 may include a first lower auxiliaryelectrode 191, a first upper auxiliary electrode 192, and a first coverauxiliary electrode 193 similar to the aforementioned first anodeelectrode 180. The first lower auxiliary electrode 191 may be formedbetween the first planarization layer 171 and the first upper auxiliaryelectrode 192 to enhance adhesion between the first planarization layer171 and the first upper auxiliary electrode 192. Also, the first lowerauxiliary electrode 191 may reduce or prevent a lower surface of thefirst upper auxiliary electrode 192 from being corroded. As a result,oxidation of the first lower auxiliary electrode 191 may be smaller thanthat of the first upper auxiliary electrode 192. That is, the firstlower auxiliary electrode 191 may be made of a material of whichcorrosion resistance is stronger than that of the first upper auxiliaryelectrode 192. In this way, the first lower auxiliary electrode 191 maybe made of, but not limited to, an alloy of Mo and Ti in the same manneras the aforementioned first lower anode electrode 181.

The first upper auxiliary electrode 192 is formed between the firstlower auxiliary electrode 191 and the first cover auxiliary electrode193, and may be may be made of, but not limited to, Cu in the samemanner as the aforementioned first upper anode electrode 182.Preferably, the first upper auxiliary electrode 192 which has relativelylow resistance is formed to be thicker than each of the first lowerauxiliary electrode 191 and the first cover auxiliary electrode 193,each of which has relatively high resistance, whereby an entireresistance of the first auxiliary electrode 190 may be reduced.

The first cover auxiliary electrode 193 is formed on the first upperauxiliary electrode 192. The first cover auxiliary electrode 193prevents the first upper auxiliary electrode 192 from being corroded bybeing formed to cover the upper surface and side of the first upperauxiliary electrode 192. As a result, oxidation of the first coverauxiliary electrode 193 may be smaller than that of the first upperauxiliary electrode 192. That is, the first cover auxiliary electrode193 may be made of a material of which corrosion resistance is strongerthan that of the first upper auxiliary electrode 192.

The first cover auxiliary electrode 193 may be formed to cover the sideof the first lower auxiliary electrode 191. Also, oxidation of the firstcover auxiliary electrode 193 may be smaller than that of the firstlower auxiliary electrode 191. That is, the first cover auxiliaryelectrode 193 may be made of a material of which corrosion resistance isstronger than that of the first lower auxiliary electrode 191. The firstcover auxiliary electrode 193 may be made of, but not limited to, atransparent conductive material such as ITO.

The first cover auxiliary electrode 193 may be formed of the samematerial and thickness as those of the first cover anode electrode 183,and the first upper auxiliary electrode 192 may be formed of the samematerial and the same thickness as those of the first upper anodeelectrode 182, and the first lower auxiliary electrode 191 may be formedof the same material and the same thickness as those of the first loweranode electrode 181. The first auxiliary electrode 190 and the firstanode electrode 180 may beneficially be formed through the same processat the same time.

The connection electrode 185 is connected with the first anode electrode180, and is formed to be extended to the transmissive area. In moredetail, the connection electrode 185 is formed to be connected with thefirst cover anode electrode 183 of the first anode electrode 180.

Since the first cover anode electrode 183 is connected with the secondanode electrode 200, the connection electrode 185 may recognize the testsignal applied to the second anode electrode 200.

As a result, when an array test is performed for the OLED device todetermine whether there is any defect in the second anode electrode 200,the test signal applied to the second anode electrode 200 is recognizedthrough the first cover anode electrode 183 formed in the transmissivearea. By doing so, interference caused by the signals of the thin filmtransistor T and the first anode electrode 180, which are formed belowthe second anode electrode 200, may be removed to perform the test forthe defect of the second anode electrode 200.

Also, the connection electrode 185 may be made of a transparentconductive material such as ITO in the same manner as the first coveranode electrode 183 and the first cover auxiliary electrode 193, and maybe formed at the same thickness as that of each of them. The first coveranode electrode 183 and the first cover auxiliary electrode 193 maybeneficially be formed through the same process at the same time.

As described above, in the OLED device according to one embodiment ofthe present invention, the connection electrode 185 made of atransparent conductive material such as ITO is formed in thetransmissive area, and the test signal of the second anode electrode 200is recognized through the connection electrode 185, and thus, the defectof the second anode electrode 200 may be tested even without affectingtransmittance of each pixel.

Also, the connection electrode 185 is formed to overlap a second anodeelectrode 200 a of a corresponding one of sub pixels of another adjacentsub pixel. Therefore, if a defect occurs in a second anode electrode 200of a specific sub pixel as a result of a test for the defect, theconnection electrode 185 of the specific sub pixel and the second anodeelectrode 200 a of another sub pixel are welded together by a laser tosimply repair the defective pixel. The corresponding sub pixel means asub pixel that emits the same light as red (R), white (W), blue (B), orgreen (G) light emitted from the sub pixel that includes the secondanode electrode 200 where the defect occurs.

The second planarization layer 172 is formed on the first auxiliaryelectrode 190, the first anode electrode 180, and the connectionelectrode 185. The second planarization layer 172 serves to planarizethe upper portion of the substrate 100 together with the aforementionedfirst planarization layer 171. The second planarization layer 172 may bemade of, but not limited to, an organic insulating material such asacryl resin, epoxy resin, phenolic resin, polyamide resin and polyimideresin. The second planarization layer 172 may be formed to be extendedto an entire active area AA that includes a transmissive area.

The second planarization layer 172 is provided with a fourth contacthole CH4 and a fifth contact hole CH5. The first anode electrode 180 isexposed by the fourth contact hole CH4, and the first auxiliaryelectrode 190 is exposed by the fifth contact hole CH5.

The second anode electrode 200 is formed on the second planarizationlayer 172. The second anode electrode 200 is connected with the firstanode electrode 180 through the fourth contact hole CH4. The secondanode electrode 200 serves to upwardly reflect the light emitted fromthe organic light emitting layer 240, and thus, is made of a materialwith excellent reflectance. The second anode electrode 200 may include asecond lower anode electrode 201, a second center anode electrode 202and a second upper anode electrode 203.

The second lower anode electrode 201 is formed between the first anodeelectrode 180 and the second center anode electrode 202. The secondlower anode electrode 201 may prevent a lower surface of the secondcenter anode electrode 202 from being corroded by protecting the lowersurface of the second center anode electrode 202. As a result, oxidationof the second lower anode electrode 201 may be smaller than that of thesecond center anode electrode 202. That is, the second lower anodeelectrode 201 may be made of a material of which corrosion resistance isstronger than that of the second center anode electrode 202. In thisway, the second lower anode electrode 201 may be made of, but notlimited to, a transparent conductive material such ITO.

The second center anode electrode 202 is formed between the second loweranode electrode 201 and the second upper anode electrode 203. The secondcenter anode electrode 202 is made of a material having a resistancelower than that of the second lower anode electrode 201 and the secondupper anode electrode 203 and a reflectance more excellent than that ofthem, and may be, for example, made of, but not limited to, Ag.Preferably, the second center anode electrode 202 which has relativelylow resistance is formed to be thicker than each of the second loweranode electrode 201 and the second upper anode electrode 203, each ofwhich has relatively high resistance, and thus, an entire resistance ofthe second anode electrode 200 may be reduced.

The second upper anode electrode 203 may be formed on the second centeranode electrode 202 to reduce or prevent an upper surface of the secondcenter anode electrode 202 from being corroded. As a result, oxidationof the second upper anode electrode 203 may be smaller than that of thesecond center anode electrode 202. That is, the second upper anodeelectrode 203 may be made of a material of which corrosion resistance isstronger than that of the second center anode electrode 202. In thisway, the second upper anode electrode 203 may be made of, but notlimited to, a transparent conductive material such ITO.

The second auxiliary electrode 210 is formed on the second planarizationlayer 172 in the same manner as the second anode electrode 200. Thesecond auxiliary electrode 210 is connected with the first auxiliaryelectrode 190 through the fifth contact hole CH5. The second auxiliaryelectrode 210 serves to lower resistance of the cathode electrode 250together with the first auxiliary electrode 190.

The second auxiliary electrode 210 may include a second lower auxiliaryelectrode 211, a second center auxiliary electrode 212, and a secondupper auxiliary electrode 213.

The second lower auxiliary electrode 211 is formed between the firstauxiliary electrode 190 and the second center auxiliary electrode 212.The second lower auxiliary electrode 211 may reduce or prevent a lowersurface of the second center auxiliary electrode 212 from being corrodedby protecting the lower surface of the second center auxiliaryelectrode. As a result, oxidation of the second lower auxiliaryelectrode 211 may be smaller than that of the second center auxiliaryelectrode 212. That is, the second lower auxiliary electrode 211 may bemade of a material of which corrosion resistance is stronger than thatof the second center auxiliary electrode 212. In this way, the secondlower auxiliary electrode 211 may be made of, but not limited to, atransparent conductive material such as ITO.

The second center auxiliary electrode 212 is formed between the secondlower auxiliary electrode 211 and the second upper auxiliary electrode213. The second center auxiliary electrode 212 is made of a materialhaving a resistance lower than that of the second lower auxiliaryelectrode 211 and the second upper auxiliary electrode 213 and areflectance more excellent than that of them, and may be, for example,made of, but not limited to, Ag. Preferably, the second center auxiliaryelectrode 212 which has relatively low resistance is formed to bethicker than each of the second lower auxiliary electrode 211 and thesecond upper auxiliary electrode 213, each of which has relatively highresistance, whereby entire resistance of the second auxiliary electrode210 may be reduced.

The second upper auxiliary electrode 213 may be formed on the secondcenter auxiliary electrode 212 to reduce or prevent an upper surface ofthe second center auxiliary electrode 212 from being corroded. As aresult, oxidation of the second upper auxiliary electrode 213 may besmaller than that of the second center auxiliary electrode 212. That is,the second upper auxiliary electrode 213 may be made of a material ofwhich corrosion resistance is stronger than that of the second centerauxiliary electrode 212. In this way, the second upper auxiliaryelectrode 213 may be made of, but not limited to, a transparentconductive material such ITO.

The second upper auxiliary electrode 213 may be formed of the samematerial and the same thickness as those of the second upper anodeelectrode 203, and the second center auxiliary electrode 212 may beformed of the same material and the same thickness as those of thesecond center anode electrode 202, and the second lower auxiliaryelectrode 211 may be formed of the same material and thickness as thoseof the second lower anode electrode 201. The second auxiliary electrode210 and the second anode electrode 200 may beneficially be formedthrough the same process at the same time.

According to one embodiment of the present invention, two auxiliaryelectrodes of the first auxiliary electrode 190 and the second auxiliaryelectrode 210, which are connected with each other to reduce theresistance of the cathode electrode 250, may be formed to more easilycontrol resistance properties of the auxiliary electrodes.

In more detail, since the second auxiliary electrode 210 is formed onthe same layer as the second anode electrode 200, if a width of thesecond auxiliary electrode 210 increases, a width of the second anodeelectrode 200 is desired to be reduced, which may reduce the pixel area.Therefore, there is limitation in increasing the width of the secondauxiliary electrode 210. In this respect, according to one embodiment ofthe present invention, the first auxiliary electrode 190 connected withthe second auxiliary electrode 210 may additionally be formed below thesecond auxiliary electrode 210 to effectively lower the resistance ofthe cathode electrode 250 even without reducing the pixel area.

The first auxiliary electrode 190 is formed on the same layer as thefirst anode electrode 180, and serves to connect the source electrode150 with the second anode electrode 200, whereby a width of the firstanode electrode 180 may be reduced, and thus a width of the firstauxiliary electrode 190 may increase. That is, the width of the firstauxiliary electrode 190 may be formed to be greater than that of thefirst anode electrode 180. Moreover, the width of the first auxiliaryelectrode 190 may increase such that the first auxiliary electrode 190may be overlapped with the second anode electrode 200. As a result, theresistance of the cathode electrode 250 may be lowered more effectively.

The bank 220 is formed on the second anode electrode 200 and the secondauxiliary electrode 210. The bank 220 is formed on one side and theother side of the second anode electrode 200 while exposing the uppersurface of the second anode electrode 200. As the bank 220 is formed toexpose the upper surface of the second anode electrode 200, an areawhere an image is displayed may be obtained. Also, as the bank 220 isformed on one side and the other side of the second anode electrode 200,the side of the second center anode electrode 202, which is vulnerableto corrosion, may be reduced or prevented from being exposed to theoutside, whereby the side of the second center anode electrode 202 maybe reduced or prevented from being corroded.

The bank 220 is formed on one side and the other side of the secondauxiliary electrode 210 while exposing the upper surface of the secondauxiliary electrode 210. As the bank 220 is formed to expose the uppersurface of the second auxiliary electrode 210, an electrical connectionspace between the second auxiliary electrode 210 and the cathodeelectrode 250 may be obtained. Also, as the bank 220 is formed on oneside and the other side of the second auxiliary electrode 210, the sideof the second center auxiliary electrode 212, which is vulnerable tocorrosion, is reduced or prevented from being exposed to the outside,whereby the side of the second center auxiliary electrode 212 may bereduced or prevented from being corroded.

Also, the bank 220 is formed between the second anode electrode 200 andthe second auxiliary electrode 210 to insulate the second electrode 200and the second auxiliary electrode 210 from each other. The bank 220 maybe made of, but not limited to, an organic insulating material such aspolyimide resin, acryl resin, and BCB.

The partition wall 230 is formed on the second auxiliary electrode 210.The partition wall 230 is spaced apart from the bank 220 at apredetermined distance, and the second auxiliary electrode 210 isconnected with the cathode electrode 250 through the spaced area betweenthe partition wall 230 and the bank 220. The partition wall 230 may notbe formed, whereby the second auxiliary electrode 210 may electricallybe connected with the cathode electrode 250 without the partition wall230. If the partition wall 230 is formed, the organic light emittinglayer 240 may, however, be deposited more easily. This will be nowdescribed in more detail.

If the partition wall 230 is not formed, a mask pattern that covers theupper surface of the second auxiliary electrode 210 when the organiclight emitting layer 240 is deposited may be required such that theupper surface of the second auxiliary electrode 210 is not covered bythe organic light emitting layer 240. However, if the partition wall 230is formed, its upper surface serves as eaves when the organic lightemitting layer 240 is deposited, whereby the organic light emittinglayer 240 is not deposited on an area below the eaves. In this case, amask pattern that covers the upper surface of the second auxiliaryelectrode 210 may not be required. That is, based on a front surface, ifthe upper surface of the partition wall 230 serving as the eaves isformed to cover the spaced area between the partition wall 230 and thebank 220, the organic light emitting layer 240 is not permeated into thespaced area between the partition wall 230 and the bank 220, whereby thesecond auxiliary electrode 210 may be exposed from the spaced areabetween the partition wall 230 and the bank 220. Particularly, since theorganic light emitting layer 240 may be formed through a depositionprocess such as evaporation in which linearity of a deposition materialis excellent, the organic light emitting layer 240 is not deposited onthe spaced area between the partition wall 230 and the bank 220.

In order that the upper surface of the partition wall 230 serves as theeaves as described above, a width of the upper surface of the partitionwall 230 is formed to be greater than that of the lower surface of thepartition wall 230. The partition wall 230 may include a first partitionwall 231 and a second partition wall 232. The first partition wall 231is formed on the second auxiliary electrode 210, and may be formed ofthe same material as that of the bank 220 through the same process asthat of the bank 220. The second partition wall 232 is formed on thefirst partition wall 231. A width of the upper surface of the secondpartition wall 232 is formed to be greater than that of the lowersurface of the second partition wall 232. Particularly, as the secondpartition wall 232 may be formed such that the upper surface of thesecond partition wall 232 covers the spaced area between the partitionwall 230 and the bank 220, the second partition wall 232 may serve asthe eaves.

The organic light emitting layer 240 is formed on the second anodeelectrode 200. The organic light emitting layer 240 may include a holeinjecting layer, a hole transporting layer, an emitting layer, anelectron transporting layer, and an electron injecting layer. Variousmodifications known in the art may be made in the organic light emittinglayer 240.

The organic light emitting layer 240 may be extended to the uppersurface of the bank 220. However, the organic light emitting layer 240is not extended to the upper surface of the second auxiliary electrode210 while covering the upper surface of the second auxiliary electrode210. This is because it may be difficult to electrically connect thesecond auxiliary electrode 210 with the cathode electrode 250 if theorganic light emitting layer 240 covers the upper surface of the secondauxiliary electrode 210. As described above, the organic light emittinglayer 240 may be formed through a deposition process without a mask thatcovers the upper surface of the second auxiliary electrode 210. In thiscase, the organic light emitting layer 240 may be formed even on thepartition wall 230.

The cathode electrode 250 is formed on the organic light emitting layer240. Since the cathode electrode 250 is formed on a surface to whichlight is emitted, the cathode electrode 250 is made of a transparentconductive material. Since the cathode electrode 250 is made of atransparent conductive material, its resistance is high. Therefore, thecathode electrode 250 is connected with the second auxiliary electrode210 to reduce resistance. That is, the cathode electrode 250 isconnected with the second auxiliary electrode 210 through the spacedarea between the partition wall 230 and the bank 220. Since the cathodeelectrode 250 may be formed through a deposition process such assputtering, in which linearity of a deposition material is not good, thecathode electrode 250 may be deposited on the spaced area between thepartition wall 230 and the bank 220.

Although not shown, an encapsulation layer may additionally be formed onthe cathode electrode 250 to reduce or prevent water permeation fromoccurring. Various materials known in the art may be used as theencapsulation layer. Also, although not shown, a color filter per pixelmay additionally be formed on the cathode electrode 250, and in thiscase, white light may be emitted from the organic light emitting layer240.

FIGS. 5A to 5H are cross-sectional views illustrating a method ofmanufacturing an OLED device according to one embodiment of the presentinvention, as it applies to the aforementioned OLED device illustratedin FIG. 4 by way of example. The same reference numbers will be usedthroughout the drawings to refer to the same or like parts, and repeateddescription in material and structure of each element will be omitted.

First of all, as illustrated in FIG. 5A, an active layer 110, a gateinsulating film 120, a gate electrode 130, an interlayer dielectric 140,a source electrode 150, and a drain electrode 160 are sequentiallyformed on a substrate 100.

In more detail, the active layer 110 is formed on the substrate 100, thegate insulating film 120 is formed on the active layer 110, the gateelectrode 130 is formed on the gate insulating film 120, the interlayerdielectric 140 is formed on the gate electrode 130, and a first contacthole CH1 and a second contact hole CH2 are formed in the gate insulatingfilm 120 and the interlayer dielectric 140. Afterwards, the drainelectrode 160 connected with one end area of the active layer 110through the first contact hole CH1 and the source electrode 150connected with the other end area of the active layer 110 through thesecond contact hole CH2 are formed.

In this case, the active layer 110, the gate electrode 130, the sourceelectrode 150 and the drain electrode 160 are formed in the lightemitting area of the substrate 100, and the gate insulating film 120 andthe interlayer dielectric 140 are formed to be extended to an entireactive area AA that includes a light emitting area and a transmissivearea.

The source electrode 150 includes a lower source electrode 151 and anupper source electrode 152, and the drain electrode 160 includes a lowerdrain electrode 161 and an upper drain electrode 162. The sourceelectrode 150 and the drain electrode 160 may be formed of the samematerial through the same patterning process at the same time.

Next, as illustrated in FIG. 5B, a passivation layer 165 is formed onthe source electrode 150 and the drain electrode 160, and a firstplanarization layer 171 is formed on the passivation layer 165. Thepassivation layer 165 and the first planarization layer 171 are formedto be extended to an entire active area AA that includes a lightemitting area and a transmissive area.

The passivation layer 165 and the first planarization layer 171 areformed to be extended to an entire active area AA that includes a lightemitting area and a transmissive area.

The passivation layer 165 and the first planarization layer 171 areformed to be provided with a third contact hole CH3 in the active areaAA, whereby the source electrode 150 is externally exposed through thethird contact hole CH3.

Next, as illustrated in FIG. 5C, a first anode electrode 180 and a firstauxiliary electrode 190 are formed to be spaced apart from each other onthe first planarization layer 171 within the active area AA, and aconnection electrode 185 is formed to be connected with the first anodeelectrode 180.

The first anode electrode 180 is formed to be connected with the sourceelectrode 150 through the third contact hole CH3. The first anodeelectrode 180 includes a first lower anode electrode 181, a first upperanode electrode 182, and a first cover anode electrode 183, and thefirst auxiliary electrode 190 includes a first lower auxiliary electrode191, a first lower auxiliary electrode 192, and a first cover auxiliaryelectrode 193.

Particularly, although the first anode electrode 180 and the firstauxiliary electrode 190 are formed in the light emitting area to obtaintransmittance of a pixel in one embodiment of the present invention, theconnection electrode 185 may be connected with the first cover anodeelectrode 183 and formed in the transmissive area, as illustrated inFIG. 5C.

In one embodiment of the present invention, when a defect of a secondanode electrode 200 formed through FIG. 5E is tested through an arraytest for an organic light emitting display device, a test signal appliedto the second anode electrode 200 is recognized through the connectionelectrode 185 formed in the transmissive area. Thus, interference causedby signals of the thin film transistor T and the first anode electrode180, which are formed below the second anode electrode 200, may beremoved, and defect test for the second anode electrode 200 may beperformed. Also, since the connection electrode 185 may be made of atransparent conductive material such as ITO, the connection electrode185 may not affect transmittance of a pixel.

Since the connection electrode 185 may be formed through the sameprocess as that of the first cover anode electrode 183 and the firstcover auxiliary electrode 183 simultaneously with them, a separate maskprocess may not be required.

Next, as illustrated in FIG. 5D, a second planarization layer 172 isformed on the first anode electrode 180, the first auxiliary electrode190 and the connection electrode 185, which are formed within the activearea AA.

The second planarization layer 172 is formed to be provided with afourth contact hole CH4 and a fifth contact hole CH5, whereby the firstanode electrode 180 is externally exposed through the fourth contacthole CH4, and the first auxiliary electrode 190 is externally exposedthrough the fifth contact hole CH5.

Next, as illustrated in FIG. 5E, a second anode electrode 200 and asecond auxiliary electrode 210 are formed to be spaced apart from eachother on the second planarization layer 172.

The second anode electrode 200 includes a second lower anode electrode201, a second center anode electrode 202, and a second upper anodeelectrode 203, and the second auxiliary electrode 210 includes a secondlower auxiliary electrode 211, a second center auxiliary electrode 212,and a second upper auxiliary electrode 213.

The second anode electrode 200 and the second auxiliary electrode 210may be formed of the same material through the same patterning processat the same time.

Particularly, in one embodiment of the present invention, as illustratedin FIG. 5E, the connection electrode 185 is formed to overlap a secondanode electrode 200 a of a corresponding one of sub pixels of anotheradjacent pixel. Therefore, if a defect occurs in the second anodeelectrode 200 of a specific sub pixel, the connection electrode 185 ofthe specific sub pixel and the second anode electrode 200 a of anotheradjacent pixel are welded by a laser to simply repair the defectivepixel.

Next, as illustrated in FIG. 5F, a bank 220 is formed on one side andthe other side of the second anode electrode 200 while an upper surfaceof the second anode electrode 200 is being exposed. Also, the bank 220is formed on one side and the other side of the second auxiliaryelectrode 210 while the upper surface of the second auxiliary electrode210 is being exposed.

Also, a first partition wall 231 and a second partition wall 232 aresequentially formed on the exposed second auxiliary electrode 210. Thefirst partition wall 231 may be formed of the same material as that ofthe bank 220 through the same patterning process as that of the bank 220simultaneously with the bank 220. The partition wall 230 is formed to bespaced apart from the bank 220 at a predetermined distance, whereby aspaced area is provided between the partition wall 230 and the bank 220.

In order that an upper surface of the partition wall 230 serves aseaves, a width of an upper surface of the second partition wall 232 isformed to be greater than that of a lower surface of the secondpartition wall 232. Particularly, based on a front surface, the uppersurface of the second partition wall 232 covers the spaced area betweenthe partition wall 230 and the bank 220, whereby an organic lightemitting layer 240, which will be described later, can be reduced orprevented from being deposited on the spaced area between the partitionwall 230 and the bank 220 during a deposition process of the organiclight emitting layer 240.

Next, as illustrated in FIG. 5G, the organic light emitting layer 240 isformed on the second anode electrode 200. The organic light emittinglayer 240 is formed through a deposition process such as evaporation inwhich linearity of a deposition material is excellent, whereby theorganic light emitting layer 240 may be deposited on the bank 220 andthe partition wall 230 but is not deposited on the spaced area betweenthe partition wall 230 and the bank 220. That is, since the uppersurface of the partition wall 230 serves as eaves during deposition ofthe organic light emitting layer 240, even though the organic lightemitting layer 240 may be deposited without a mask pattern that coversthe upper surface of the second auxiliary electrode 210, the organiclight emitting layer 240 may be reduced or prevented from beingdeposited on the spaced area between the partition wall 230 and the bank220.

Next, as illustrated in FIG. 5H, a cathode electrode 250 is formed onthe organic light emitting layer 240.

The cathode electrode 250 is formed to be connected with the secondauxiliary electrode 210 through the spaced area between the partitionwall 230 and the bank 220. The cathode electrode 250 may be formedthrough a deposition process such as sputtering in which linearity of adeposition material is not good, whereby the cathode electrode 250 maybe deposited on the spaced area between the partition wall 230 and thebank 220.

According to one embodiment of the present invention, the test signal atthe anode electrode is transmitted through the connection electrodeconnected with the anode electrode and formed in the transmissive areaof the pixel, whereby the defect of the anode electrode may beaccurately tested substantially without interference caused by anotherelectrode.

According to one embodiment of the present invention, the connectionelectrode made of a transparent conductive material is formed in thetransmissive area of the pixel, whereby the defect of the anodeelectrode may be tested substantially without affecting transmittance ofeach pixel.

According to one embodiment of the present invention, since theconnection electrode may be formed through a process of forming theanode electrode simultaneously with the anode electrode, the number ofmask process may not increase.

According to one embodiment of the present invention, when a defectoccurs in an anode electrode of a specific pixel, another anodeelectrode of a corresponding one of sub pixels of another adjacent pixeland the connection electrode are welded to simply repair the defectivepixel.

It will be apparent to those skilled in the art that variousmodifications and variations can be made in the present inventionwithout departing from the spirit or scope of the inventions. Thus, itis intended that the present invention covers the modifications andvariations of this invention provided they come within the scope of theappended claims and their equivalents.

1-20. (canceled)
 21. An organic light emitting display devicecomprising: a substrate having a plurality of pixels, each pixelincluding a light emitting area provided with a plurality of sub pixelsand non-light emitting area including a transmissive area; an anodeelectrode in the light emitting area; an organic light emitting layer onthe anode electrode; a cathode electrode on the organic light emittinglayer; and a connection electrode connected with the anode electrode,provided in the non-light emitting area, wherein the connectionelectrode extends to the corresponding one of sub pixels of the adjacentpixel along one side of the transmissive area.
 22. The organic lightemitting display device of claim 21, wherein the connection electrodeformed to overlap an anode electrode of a corresponding one of subpixels of an adjacent pixel so as to repair the anode electrode byconnecting the connection electrode and the anode electrode of thecorresponding one of sub pixels of the adjacent pixel.
 23. The organiclight emitting display device of claim 21, wherein the cathode electrodeis provided in the light emitting area, the transmissive area, and anarea between the transmissive areas.
 24. The organic light emittingdisplay device of claim 21, wherein the anode electrode includes a firstanode electrode and a second anode electrode, and the connectionelectrode is disposed on the same layer as the first anode electrode.25. The organic light emitting display device of claim 24, wherein thesecond anode electrode connected with the first anode electrode througha contact hole.
 26. The organic light emitting display device of claim21, wherein the connection electrode overlaps an anode electrode of thecorresponding one of sub pixels of the adjacent pixel.
 27. The organiclight emitting display device of claim 26, wherein, when the anodeelectrode of a specific sub pixel has a defect, the connection electrodeof the specific sub pixel and the anode electrode of the correspondingone of sub pixels of the adjacent pixel are welded by a laser.
 28. Theorganic light emitting display device of claim 21, wherein the anodeelectrode includes a first lower anode electrode and a first upper anodeelectrode, and a first cover anode electrode, and wherein the connectionelectrode is connected with the first cover anode electrode.
 29. Theorganic light emitting display device of claim 28, wherein the firstcover anode electrode is disposed to cover an upper surface and a sideof the first upper anode electrode.
 30. The organic light emittingdisplay device of claim 28, wherein an oxidation of the first loweranode electrode and the first cover anode electrode is smaller than thatof the first upper anode electrode, and wherein a resistance of thefirst upper anode electrode is lower than that of each of the firstlower anode electrode and the first cover anode electrode.
 31. Theorganic light emitting display device of claim 21, further comprising anauxiliary electrode connected with the cathode electrode.
 32. Theorganic light emitting display device of claim 31, wherein the auxiliaryelectrode is provided in the light emitting area.
 33. The organic lightemitting display device of claim 31, wherein the auxiliary electrode isoverlapped with the anode electrode.
 34. The organic light emittingdisplay device of claim 31, wherein the auxiliary electrode includes alower auxiliary electrode and a upper auxiliary electrode and a coverauxiliary electrode.
 35. The organic light emitting display device ofclaim 34, wherein the cover auxiliary electrode is disposed to cover anupper surface and a side of the upper auxiliary electrode.
 36. Theorganic light emitting display device of claim 31, wherein a width ofthe auxiliary electrode is greater than that of the anode electrode. 37.The organic light emitting display device of claim 21, wherein theplurality of sub pixels is comprised of sub pixels that emit red light,white light, blue light, and green light, and the sub pixels arearranged in a first direction.
 38. The organic light emitting displaydevice of claim 37, wherein the corresponding one of sub pixels is a subpixel that emits the same light.
 39. The organic light emitting displaydevice of claim 21, wherein the light emitting area and the transmissivearea have different areas.
 40. The organic light emitting display deviceof claim 21, wherein the transmissive area has a larger area than thelight emitting area.